- Jung Won Seo,
- Jae-Woo Park,
- Keong Su Lim,
- Ji-Hwan Yang and
- Sang Jung Kang,
The fabrication of a fully transparent resistive random access memory (TRRAM) device was possible and this is based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81%(including the substrate) in the visible region and an
excellent switching behavior under 3 V.
The beside picture deicts the Nokia Morph concept phone which uses the nanotechnology concepts and also the tranparency property of the electronic gadgets.
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